regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 10v drive v dss ............................................................ .................... 500v r ds (on) (max) ............................................................ .. 0.64 w i d ............................................................ ............................. 14a l l l l l v iso ............................................................ .................... 2000v 500 30 14 42 14 40 C55 ~ +150 C55 ~ +150 2000 2.0 v v a a a w c c v g FL14KM-10A 15 0.314 0.5 10 0.3 2.8 0.2 f 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.252.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.33.6 0.3 6.5 0.3 a a gate drain a source v gs = 0v v ds = 0v l = 200 m h ac for 1minute, terminal to case typical value mitsubishi power mosfet FL14KM-10A high-speed switching use nch power mosfet application inverter type fluorescent light sets, smps parameter conditions symbol ratings unit v dss v gss i d i dm i da p d t ch t stg v iso drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight to-220fn outline drawing dimensions in mm maximum ratings (tc = 25 c)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FL14KM-10A high-speed switching use nch power mosfet i d = 1ma, v gs = 0v i gs = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 500v, v gs = 0v i d = 1ma, v ds = 10v i d = 7a, v gs = 10v i d = 7a, v gs = 10v i d = 7a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 7a, v gs = 10v, r gen = r gs = 50 w i s = 7a, v gs = 0v channel to case v v m a ma v w v s pf pf pf ns ns ns ns v c/w 500 30 2.0 3.0 0.50 3.5 10.0 1500 180 60 30 60 250 115 1.5 10 1.0 4.0 0.64 4.5 2.0 3.13 0 10 20 30 40 50 0 20050 100 150 0 10 20 30 40 50 0 1020304050 p d = 40w v gs = 20v tc = 25 c pulse test 10v 4v 6v 5v 10 0 10 ? 3 5 7 10 1 2 3 5 7 2 3 5 7 10 0 2 10 1 357 2 10 2 357 2 10 3 57 2 3 tw = 10 m s tc = 25 c single pulse 100 m s 10ms 1ms dc 0 4 8 12 16 20 0 4 8 12 16 20 v gs = 20v tc = 25 c pulse test 10v 6v 5v 4v p d = 40w output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain-source voltage v ds (v) maximum safe operating area drain-source voltage v ds (v) power dissipation derating curve case temperature t c ( c) power dissipation p d (w) drain current i d (a) drain current i d (a) symbol parameter test conditions limits min. typ. max. unit v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance electrical characteristics (tch = 25 c) performance curves
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FL14KM-10A high-speed switching use nch power mosfet 0 10 20 30 40 50 0 4 8 12 16 20 i d = 25a tc = 25 c pulse test 7a 14a 0 0.2 0.4 0.6 0.8 1.0 10 -1 2 10 0 357 2 10 1 357 23 10 2 57 v gs = 10v tc = 25 c pulse test 20v 0 10 20 30 40 50 0 4 8 12 16 20 tc = 25 c v ds = 50v pulse test 10 0 10 1 23 57 10 2 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 tc = 25 c 75 c 125 c v ds = 10v pulse test 10 3 2 3 5 7 10 2 2 3 5 7 10 1 2 3 5 7 5 7 2 10 2 357 2 2 10 1 357 2 10 ? 10 0 357 ciss coss crss tch = 25 c f = 1mh z v gs = 0v 10 0 10 1 23457 10 2 23457 10 2 2 3 4 5 10 1 2 3 4 5 7 5 7 t d(off) t d(on) t r tch = 25 c v dd = 200v v gs = 10v r gen = r gs = 50 w t f on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) transfer characteristics (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) switching characteristics (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns)
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi power mosfet FL14KM-10A high-speed switching use nch power mosfet 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0 t c = 125 c 75 c 25 c v gs = 0v pulse test 0 4 8 12 16 20 0 20406080 120 100 v ds = 100v 200v 400v tch = 25 c i d = 14a 10 ? 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?0 0 5 0 100 150 v gs = 10v i d = 7a pulse test 0 2 4 6 8 10 ?0 0 5 0 100 150 v ds = 10v i d = 1ma 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 5 0 100 150 v gs = 0v i d = 1ma 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? p dm tw d = t tw t 0.5 0.05 0.01 0.02 0.2 duty = 1.0 single pulse 0.1 gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) drain-source on-state resistance r ds (on) (25 c) threshold voltage vs. channel temperature (typical) on-state resistance vs. channel temperature (typical) channel temperature tch ( c) gate-source threshold voltage v gs (th) (v) channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) transient thermal impedance characteristics pulse width tw (s) transient thermal impedance z th (ch-c) ( c/w) drain-source breakdown voltage v ( br) dss (t c) drain-source breakdown voltage v (br) dss (25 c)
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